GROWTH OF DISLOCATION-FREE SILICON-CRYSTALS FROM A PEDESTAL

被引：0

|

作者：

MAKEEV, KI

TUROVSKII, BM

KHLEBNIKOV, VG

VIGDOROVICH, VN

机构：

来源：

INORGANIC MATERIALS | 1988年 / 24卷 / 09期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：1344 / 1346

页数：3

相关论文

共 50 条

[1] GROWTH OF DISLOCATION-FREE BULK SILICON-CRYSTALS
BAGAI, RK
BORLE, WN
[J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1983, 6 (01): : 25 - 46
[2] DISLOCATION-FREE CZOCHRALSKI GROWTH OF (110) SILICON-CRYSTALS
DYER, LD
[J]. JOURNAL OF CRYSTAL GROWTH, 1979, 47 (04) : 533 - 540
[3] DISLOCATION-FREE CZOCHRALSKI GROWTH OF SILICON-CRYSTALS IN DIFFICULT ORIENTATIONS
DYER, LD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C113 - C113
[4] FORMATION AND ELIMINATION OF GROWTH STRIATIONS IN DISLOCATION-FREE SILICON-CRYSTALS
KOCK, AJRD
ROKSNOER, PJ
BOONEN, PGT
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 28 (01) : 125 - 137
[5] NITROGEN DOPING DURING GROWTH OF DISLOCATION-FREE FZ SILICON-CRYSTALS
WOLF, E
SCHRODER, W
[J]. CRYSTAL RESEARCH AND TECHNOLOGY, 1987, 22 (02) : K21 - K22
[6] GROWTH AND PROPERTIES OF [100] AND [111] DISLOCATION-FREE SILICON-CRYSTALS FROM A COLD CRUCIBLE
CISZEK, TF
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 324 - 329
[7] LAYERED IMPURITY DISTRIBUTIONS IN DISLOCATION-FREE SILICON-CRYSTALS
GARNYK, VS
GORIN, SN
KALYUZHNAYA, SI
TIMONINA, NV
[J]. INORGANIC MATERIALS, 1988, 24 (10) : 1479 - 1480
[8] CHARACTERIZATION OF SWIRL DEFECTS IN DISLOCATION-FREE SILICON-CRYSTALS
KOCK, AJRD
PETROFF, P
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : C81 - C81
[9] EFFECT OF GROWTH-CONDITIONS ON FORMATION OF MICRODEFECTS IN DISLOCATION-FREE SILICON-CRYSTALS
GRISHIN, VP
KATERUSHINA, LP
LAINER, LV
REMIZOV, OA
[J]. INORGANIC MATERIALS, 1982, 18 (09) : 1222 - 1224
[10] GROWTH OF DISLOCATION-FREE SILICON-CRYSTALS IN THE (110) DIRECTION FOR USE AS NEUTRON MONOCHROMATORS
MURTHY, MRLN
AUBERT, JJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) : 391 - 395

← 1 2 3 4 5 →