首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
GROWTH AND PROPERTIES OF [100] AND [111] DISLOCATION-FREE SILICON-CRYSTALS FROM A COLD CRUCIBLE
被引:3
|
作者
:
CISZEK, TF
论文数:
0
引用数:
0
h-index:
0
CISZEK, TF
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1984年
/ 70卷
/ 1-2期
关键词
:
D O I
:
10.1016/0022-0248(84)90282-3
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:324 / 329
页数:6
相关论文
共 50 条
[1]
GROWTH OF DISLOCATION-FREE SILICON-CRYSTALS FROM A PEDESTAL
MAKEEV, KI
论文数:
0
引用数:
0
h-index:
0
MAKEEV, KI
TUROVSKII, BM
论文数:
0
引用数:
0
h-index:
0
TUROVSKII, BM
KHLEBNIKOV, VG
论文数:
0
引用数:
0
h-index:
0
KHLEBNIKOV, VG
VIGDOROVICH, VN
论文数:
0
引用数:
0
h-index:
0
VIGDOROVICH, VN
INORGANIC MATERIALS,
1988,
24
(09)
: 1344
-
1346
[2]
GROWTH OF DISLOCATION-FREE BULK SILICON-CRYSTALS
BAGAI, RK
论文数:
0
引用数:
0
h-index:
0
BAGAI, RK
BORLE, WN
论文数:
0
引用数:
0
h-index:
0
BORLE, WN
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS,
1983,
6
(01):
: 25
-
46
[3]
DISLOCATION-FREE CZOCHRALSKI GROWTH OF (110) SILICON-CRYSTALS
DYER, LD
论文数:
0
引用数:
0
h-index:
0
DYER, LD
JOURNAL OF CRYSTAL GROWTH,
1979,
47
(04)
: 533
-
540
[4]
DISLOCATION-FREE CZOCHRALSKI GROWTH OF SILICON-CRYSTALS IN DIFFICULT ORIENTATIONS
DYER, LD
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENT INC,SHERMAN,TX 75090
TEXAS INSTRUMENT INC,SHERMAN,TX 75090
DYER, LD
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(03)
: C113
-
C113
[5]
FORMATION AND ELIMINATION OF GROWTH STRIATIONS IN DISLOCATION-FREE SILICON-CRYSTALS
KOCK, AJRD
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
KOCK, AJRD
ROKSNOER, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
ROKSNOER, PJ
BOONEN, PGT
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
BOONEN, PGT
JOURNAL OF CRYSTAL GROWTH,
1975,
28
(01)
: 125
-
137
[6]
NITROGEN DOPING DURING GROWTH OF DISLOCATION-FREE FZ SILICON-CRYSTALS
WOLF, E
论文数:
0
引用数:
0
h-index:
0
WOLF, E
SCHRODER, W
论文数:
0
引用数:
0
h-index:
0
SCHRODER, W
CRYSTAL RESEARCH AND TECHNOLOGY,
1987,
22
(02)
: K21
-
K22
[7]
LAYERED IMPURITY DISTRIBUTIONS IN DISLOCATION-FREE SILICON-CRYSTALS
GARNYK, VS
论文数:
0
引用数:
0
h-index:
0
GARNYK, VS
GORIN, SN
论文数:
0
引用数:
0
h-index:
0
GORIN, SN
KALYUZHNAYA, SI
论文数:
0
引用数:
0
h-index:
0
KALYUZHNAYA, SI
TIMONINA, NV
论文数:
0
引用数:
0
h-index:
0
TIMONINA, NV
INORGANIC MATERIALS,
1988,
24
(10)
: 1479
-
1480
[8]
CHARACTERIZATION OF SWIRL DEFECTS IN DISLOCATION-FREE SILICON-CRYSTALS
KOCK, AJRD
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS, EINDHOVEN, NETHERLANDS
PHILIPS RES LABS, EINDHOVEN, NETHERLANDS
KOCK, AJRD
PETROFF, P
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS, EINDHOVEN, NETHERLANDS
PHILIPS RES LABS, EINDHOVEN, NETHERLANDS
PETROFF, P
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(03)
: C81
-
C81
[9]
EFFECT OF GROWTH-CONDITIONS ON FORMATION OF MICRODEFECTS IN DISLOCATION-FREE SILICON-CRYSTALS
GRISHIN, VP
论文数:
0
引用数:
0
h-index:
0
GRISHIN, VP
KATERUSHINA, LP
论文数:
0
引用数:
0
h-index:
0
KATERUSHINA, LP
LAINER, LV
论文数:
0
引用数:
0
h-index:
0
LAINER, LV
REMIZOV, OA
论文数:
0
引用数:
0
h-index:
0
REMIZOV, OA
INORGANIC MATERIALS,
1982,
18
(09)
: 1222
-
1224
[10]
GROWTH OF DISLOCATION-FREE SILICON-CRYSTALS IN THE (110) DIRECTION FOR USE AS NEUTRON MONOCHROMATORS
MURTHY, MRLN
论文数:
0
引用数:
0
h-index:
0
机构:
CEA,CENG,LETI,CRM,F-38041 GRENOBLE,FRANCE
CEA,CENG,LETI,CRM,F-38041 GRENOBLE,FRANCE
MURTHY, MRLN
AUBERT, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
CEA,CENG,LETI,CRM,F-38041 GRENOBLE,FRANCE
CEA,CENG,LETI,CRM,F-38041 GRENOBLE,FRANCE
AUBERT, JJ
JOURNAL OF CRYSTAL GROWTH,
1981,
52
(APR)
: 391
-
395
←
1
2
3
4
5
→