GROWTH OF DISLOCATION-FREE SILICON-CRYSTALS FROM A PEDESTAL

被引：0

|

作者：

MAKEEV, KI

TUROVSKII, BM

KHLEBNIKOV, VG

VIGDOROVICH, VN

机构：

来源：

INORGANIC MATERIALS | 1988年 / 24卷 / 09期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：1344 / 1346

页数：3

相关论文

共 50 条

[41] Mechanics of Defects in Dislocation-Free Silicon Single Crystals
N. A. Verezub
A.I. Prostomolotov
Mechanics of Solids, 2023, 58 : 383 - 403
[42] THE GROWTH OF DISLOCATION-FREE BICRYSTAL SILICON RIBBON
CHENG, Y
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1993, 26 (07) : 1109 - 1113
[43] Optical anisotropy in dislocation-free silicon single crystals
Chu, T
Yamada, M
Donecker, J
Rossberg, M
Alex, V
Riemann, H
MICROELECTRONIC ENGINEERING, 2003, 66 (1-4) : 327 - 332
[44] Mechanics of Defects in Dislocation-Free Silicon Single Crystals
Verezub, N. A.
Prostomolotov, A. I.
MECHANICS OF SOLIDS, 2023, 58 (02) : 383 - 403
[45] HYDROTHERMAL GROWTH OF LARGE DISLOCATION-FREE CRYSTALS OF QUARTZ
GORDIENKO, LA
MIUSKOV, VF
KHADZHI, VE
TSINOBER, LI
SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1969, 14 (03): : 454 - +
[46] GROWTH OF DISLOCATION-FREE GAAS CRYSTALS BY NITROGEN DOPING
JACOB, G
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) : 669 - 671
[47] NUCLEATION AND GROWTH OF TWINS IN DISLOCATION-FREE ZINC CRYSTALS
PRICE, PB
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1961, 260 (1300) : 251 - +
[48] The aggregation of point defects in dislocation-free silicon single crystals
Talanin, V., I
Talanin, I. E.
Voronin, A. A.
Sirota, A., V
FUNCTIONAL MATERIALS, 2007, 14 (01): : 48 - 52
[49] Antimony concentration limitation in dislocation-free CZ silicon crystals
Chiou, HD
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (04) : G295 - G298
[50] Modeling of the Defect Structure in Dislocation-Free Silicon Single Crystals
Talanin, V. I.
Talanin, I. E.
Voronin, A. A.
CRYSTALLOGRAPHY REPORTS, 2008, 53 (07) : 1124 - 1132

← 1 2 3 4 5 →