HIGH-RATE EPITAXIAL-GROWTH OF DIAMOND ON SI(100) BY DC PLASMA CVD

被引：12
|
作者：
WANG, WL
LIAO, KJ
GAO, JY
机构：
[1] Physics Department, Lanzhou University
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 128卷 / 02期
关键词：
D O I：
10.1002/pssa.2211280236
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：K83 / K87
页数：5
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