EPITAXIAL-GROWTH OF ZRN ON SI(100)

被引:38
|
作者
BARNETT, SA
HULTMAN, L
SUNDGREN, JE
RONIN, F
ROHDE, S
机构
[1] NORTHWESTERN UNIV,DEPT MAT SCI,EVANSTON,IL 60201
[2] NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60208
[3] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208
关键词
D O I
10.1063/1.99891
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:400 / 402
页数:3
相关论文
共 50 条
  • [1] EPITAXIAL-GROWTH OF SI DEPOSITED ON (100) SI
    HUNG, LS
    LAU, SS
    VONALLMEN, M
    MAYER, JW
    ULLRICH, BM
    BAKER, JE
    WILLIAMS, P
    TSENG, WF
    [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 909 - 911
  • [2] EPITAXIAL-GROWTH OF COSI2 ON SI(100)
    HADERBACHE, L
    WETZEL, P
    PIRRI, C
    PERUCHETTI, JC
    BOLMONT, D
    GEWINNER, G
    [J]. THIN SOLID FILMS, 1990, 184 : 317 - 323
  • [3] EPITAXIAL-GROWTH OF AL ON SI(100) AND SI(111) BY EVAPORATION IN UHV
    HASAN, MA
    RADNOCZI, G
    SUNDGREN, JE
    [J]. VACUUM, 1990, 41 (4-6) : 1121 - 1123
  • [4] GETTERING OF P+ (100) SI SUBSTRATES FOR EPITAXIAL-GROWTH
    DYSON, W
    HELLWIG, L
    MOODY, J
    ROSSI, JA
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C90 - C90
  • [5] OPTIMIZATION OF SI EPITAXIAL-GROWTH
    KOSZA, G
    KUZNETSOV, FA
    KORMANY, T
    NAGY, L
    [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) : 207 - 212
  • [6] LIMITING THICKNESS HEPI FOR EPITAXIAL-GROWTH AND ROOM-TEMPERATURE SI GROWTH ON SI(100)
    EAGLESHAM, DJ
    GOSSMANN, HJ
    CERULLO, M
    [J]. PHYSICAL REVIEW LETTERS, 1990, 65 (10) : 1227 - 1230
  • [7] EFFECT OF ALAS BUFFER LAYERS ON EPITAXIAL-GROWTH OF GAAS ON SI(100)
    KOBAYASHI, H
    KAWABE, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (08): : L1342 - L1345
  • [8] EPITAXIAL-GROWTH OF (011) AL ON (100) SI BY VAPOR-DEPOSITION
    THANGARAJ, N
    WESTMACOTT, KH
    DAHMEN, U
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (01) : 37 - 39
  • [9] OBSERVATION AND ANALYSIS OF EPITAXIAL-GROWTH OF COSI2 ON (100) SI
    BULLELIEUWMA, CWT
    VANOMMEN, AH
    HORNSTRA, J
    AUSSEMS, CNAM
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (05) : 2211 - 2224
  • [10] MODEL OF EPITAXIAL-GROWTH OF GAAS ON SI(100) - NUCLEATION AT SURFACE STEPS
    ALERHAND, OL
    KAXIRAS, E
    JOANNOPOULOS, JD
    TURNER, GW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 695 - 699