High-rate synthesis of highly oriented diamond films on silicon by DC arc plasma jet CVD

被引：0
|
作者：
Higa, A
Hatta, A
Ito, T
Toguchi, M
Hiraki, A
机构：
[1] UNIV RYUKYUS,FAC ENGN,NISHIHARA,OKINAWA 90301,JAPAN
[2] OSAKA UNIV,FAC ENGN,SUITA,OSAKA 565,JAPAN
来源：
DIAMOND FILMS AND TECHNOLOGY | 1996年 / 6卷 / 05期
关键词：
diamond films; highly oriented film; DC arc plasma jet CVD; high growth rate;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated the synthesis of highly oriented diamond films by DC arc plasma jet CVD. In order to investigate the conditions for obtaining [100] texture diamond films, films were synthesized at different substrate temperatures and methane concentrations. In order to promote the formation of oriented nuclei, a substrate was pretreated by bias-enhanced nucleation using a microwave plasma CVD system in this study. Highly oriented diamond films were synthesized on Si(100) substrate by DC are plasma jet CVD under the conditions for [100] texture film synthesis. This is the first report of the growth of highly oriented diamond films at a high growth rate (approximately 10 mu m/h) by this method.
引用
收藏
页码：277 / 282
页数：6
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