COMPUTERIZED ESTIMATION OF THE SILICON SURFACE THERMAL-OXIDATION

被引:0
|
作者
TSURIN, OF
SINEKOP, YS
BONAT, EE
机构
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:93 / 96
页数:4
相关论文
共 50 条
  • [21] CHEMICALLY ENHANCED THERMAL-OXIDATION OF SILICON
    SCHMIDT, PF
    JACCODINE, RJ
    WOLOWODIUK, CH
    KOOK, T
    MATERIALS LETTERS, 1985, 3 (5-6) : 235 - 238
  • [22] ENHANCEMENT IN THERMAL-OXIDATION OF SILICON BY OZONE
    CHAO, SC
    PITCHAI, R
    LEE, YH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (09) : 2751 - 2752
  • [23] DEFECT FORMATION IN THE SURFACE REGION OF SILICON DURING ITS THERMAL-OXIDATION
    SHAPOVALOV, VP
    GRYADUN, VI
    KOROLEV, AE
    SEMICONDUCTORS, 1995, 29 (11) : 1040 - 1043
  • [24] SILICON OXIDATION STUDIES - A REVISED MODEL FOR THERMAL-OXIDATION
    IRENE, EA
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5416 - 5420
  • [25] DEFORMATION OF SILICON-WAFERS BY THERMAL-OXIDATION
    HABERMEIER, HU
    ALT, HC
    TAPFER, L
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) : 1445 - 1446
  • [26] HIGH-PRESSURE THERMAL-OXIDATION OF SILICON
    THOMPSON, T
    WIESNER, J
    CARLSON, D
    KLINE, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C118 - C118
  • [27] REDISTRIBUTION OF BORON DURING THERMAL-OXIDATION OF SILICON
    LEE, HG
    DUTTON, RW
    ANTONIADIS, DA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (11) : 2001 - 2007
  • [28] KINETICS AND MECHANISM OF TRANSIENT THERMAL-OXIDATION OF SILICON
    PARKHUTIK, VP
    LABUNOV, VA
    CHIGIR, GG
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 96 (01): : 11 - 18
  • [29] ENHANCED THERMAL-OXIDATION OF SILICON BY OXYGEN JET
    HOH, K
    KAKIMOTO, N
    TOYODA, T
    HANEJI, N
    DENKI KAGAKU, 1995, 63 (06): : 460 - 465
  • [30] THERMAL-OXIDATION OF ION-IMPLANTED SILICON
    WILLIAMS, JS
    CHRISTODOULIDES, CE
    NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 667 - 673