EFFECTS OF DIFFUSED NICKEL ON SILICON-SILICON DIOXIDE INTERFACE

被引：6

作者：

LIBLICH, S ^{[1
]}

NASSIBIAN, AG ^{[1
]}

机构：

[1] UNIV WESTERN AUSTRALIA, DEPT ELECT ENGN, NEDLANDS 6009, WESTERN AUSTRAL, AUSTRALIA

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 12期

关键词：

D O I：

10.1016/0038-1101(73)90067-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1495 / 1499

页数：5

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