PARAMAGNETIC DEFECTS IN SILICON-SILICON DIOXIDE SYSTEMS

被引：46
|
作者：
CAPLAN, PJ [1 ]
HELBERT, JN [1 ]
WAGNER, BE [1 ]
POINDEXTER, EH [1 ]
机构：
[1] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703
来源：
SURFACE SCIENCE | 1976年 / 54卷 / 01期
关键词：
D O I：
10.1016/0039-6028(76)90085-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：33 / 42
页数：10
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