PARAMAGNETIC DEFECTS IN SILICON-SILICON DIOXIDE SYSTEMS

被引：46

作者：

CAPLAN, PJ ^{[1
]}

HELBERT, JN ^{[1
]}

WAGNER, BE ^{[1
]}

POINDEXTER, EH ^{[1
]}

机构：

[1] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703

来源：

SURFACE SCIENCE | 1976年 / 54卷 / 01期

关键词：

D O I：

10.1016/0039-6028(76)90085-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：33 / 42

页数：10

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