OHMIC CONTACTS TO EPITAXIAL PGAAS

被引：27
|
作者：
GOPEN, HJ
YU, AYC
机构：
来源：
SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 06期
关键词：
D O I：
10.1016/0038-1101(71)90062-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：515 / &
相关论文
共 50 条
  • [21] OHMIC CONTACTS TO CDS
    YAMAGUCHI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (08) : 1325 - 1326
  • [22] OHMIC CONTACTS TO GAAS
    MITRA, RN
    ROY, SB
    DAW, AN
    JOURNAL OF SCIENTIFIC & INDUSTRIAL RESEARCH, 1979, 38 (08): : 410 - 413
  • [23] Silicides and ohmic contacts
    Gambino, JP
    Colgan, EG
    MATERIALS CHEMISTRY AND PHYSICS, 1998, 52 (02) : 99 - 146
  • [24] OHMIC CONTACTS ON SILICON
    VOSKOBOI.VV
    SINITSA, SP
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1967, (04): : 953 - +
  • [25] NONALLOYED OHMIC CONTACTS TO N-GAAS USING EPITAXIAL N-GE LAYER
    PAI, CS
    SAWADA, T
    MARSHALL, ED
    CHEN, WX
    LAU, SS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : C221 - C221
  • [26] Mechanism of nonalloyed Al ohmic contacts to n-type ZnO:Al epitaxial layer
    Kim, HK
    Seong, TY
    Kim, KK
    Park, SJ
    Yoon, YS
    Adesida, I
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (03): : 976 - 979
  • [27] Epitaxial growth and Ohmic contacts in MgxZn1-xO/TiN/Si(111) heterostructures
    Jin, Chunming
    Wei, Wei
    Zhou, Honghui
    Yang, Tsung-Han
    Narayan, Roger J.
    APPLIED PHYSICS LETTERS, 2008, 93 (25)
  • [28] THE INFLUENCE OF OHMIC METAL COMPOSITION ON THE CHARACTERISTICS OF OHMIC CONTACTS
    KOVACS, B
    MOJZES, I
    VERESEGYHAZY, R
    NEMETHSALLAY, M
    BIRO, S
    PECZ, B
    VACUUM, 1990, 40 (1-2) : 179 - 181
  • [29] CHARACTERIZATION OF OHMIC CONTACTS TO INP
    ERICKSON, LP
    WASEEM, A
    ROBINSON, GY
    THIN SOLID FILMS, 1979, 64 (03) : 421 - 426
  • [30] OHMIC CONTACTS TO SEMICONDUCTING DIAMOND
    MOAZED, KL
    NGUYEN, R
    ZEIDLER, JR
    IEEE ELECTRON DEVICE LETTERS, 1988, 9 (07) : 350 - 351
12345