NONALLOYED OHMIC CONTACTS TO N-GAAS USING EPITAXIAL N-GE LAYER

被引：0
|
作者：
PAI, CS [1 ]
SAWADA, T [1 ]
MARSHALL, ED [1 ]
CHEN, WX [1 ]
LAU, SS [1 ]
机构：
[1] UNIV CALIF SAN DIEGO,DEPT ELECT ENGN & COMP SCI,LA JOLLA,CA 92093
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C221 / C221
页数：1
相关论文
共 50 条
  • [1] THE MICROSTRUCTURE AND ELECTRICAL-PROPERTIES OF NONALLOYED EPITAXIAL AU-GE OHMIC CONTACTS TO N-GAAS
    LEE, HS
    COLE, MW
    LAREAU, RT
    SCHAUER, SN
    FOX, DC
    ECKART, DW
    MOERKIRK, RP
    CHANG, WH
    JONES, KA
    ELAGOZ, S
    VAVRA, W
    CLARKE, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (10) : 4773 - 4780
  • [2] NONALLOYED OHMIC CONTACTS TO N-GAAS BY SOLID-PHASE EPITAXY OF GE
    MARSHALL, ED
    ZHANG, B
    WANG, LC
    JIAO, PF
    CHEN, WX
    SAWADA, T
    LAU, SS
    KAVANAGH, KL
    KUECH, TF
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 942 - 947
  • [3] CHARACTERISTICS OF PDIN OHMIC CONTACTS TO N-GAAS WITH A THIN GE LAYER
    FU, HG
    HUANG, TS
    [J]. SOLID-STATE ELECTRONICS, 1995, 38 (07) : 1299 - 1304
  • [4] Regrowth of a GaAs layer for n-GaAs ohmic contacts
    [J]. 1600, (71):
  • [5] Ohmic contacts to n-GaAs nanowires
    Gutsche, C.
    Lysov, A.
    Regolin, I.
    Brodt, A.
    Liborius, L.
    Frohleiks, J.
    Prost, W.
    Tegude, F. -J.
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (01)
  • [6] OHMIC CONTACTS TO N-GAAS USING IN/PD METALLIZATION
    ALLEN, LH
    HUNG, LS
    KAVANAGH, KL
    PHILLIPS, JR
    YU, AJ
    MAYER, JW
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (05) : 326 - 327
  • [7] Chemical characterization by XPS of Cu/Ge ohmic contacts to n-GaAs
    Lopez, M. C.
    Galiana, B.
    Algora, C.
    Rey-Stolle, I.
    Gabas, M.
    Ramos-Barrado, J. R.
    [J]. APPLIED SURFACE SCIENCE, 2007, 253 (11) : 5062 - 5066
  • [8] OHMIC CONTACTS ON N-GAAS PRODUCED BY LASER ALLOYING OF GE FILMS
    BADERTSCHER, G
    SALATHE, RP
    LUTHY, W
    [J]. ELECTRONICS LETTERS, 1980, 16 (04) : 113 - 114
  • [9] Solid phase epitaxial regrowth of n-GaAs with Ti-Ge-Ni metallization for ohmic contacts
    Kim, TJ
    Krishnamoothy, V
    Puga-Lambers, M
    Holloway, PH
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) : 208 - 212
  • [10] A 3 LAYER MODEL OF PLANAR ALLOYED OHMIC CONTACTS TO N-GAAS
    PORGES, M
    LALINSKY, T
    MOZOLOVA, Z
    KUZMIK, J
    [J]. SOLID-STATE ELECTRONICS, 1990, 33 (12) : 1531 - 1538
12345