VIBRATIONALLY RESOLVED CORE-LEVEL PHOTOELECTRON-SPECTROSCOPY - SI 2P LEVELS OF SIH4 AND SIF4 MOLECULES

被引:100
|
作者
BOZEK, JD
BANCROFT, GM
CUTLER, JN
TAN, KH
机构
[1] UNIV WESTERN ONTARIO,CTR CHEM PHYS,LONDON N6A 5B7,ONTARIO,CANADA
[2] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,CANADIAN SYNCHROTRON RADIAT FACIL,STOUGHTON,WI 53589
关键词
D O I
10.1103/PhysRevLett.65.2757
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
High-resolution photoelectron spectra (total instrumental width 0.1 eV) of the Si 2p core levels of SiH4 and SiF4 were obtained using the Aladdin undulator source. The vibrationally resolved Si 2p photoelectron spectrum of SiH4 yields a Si-H stretching energy of 0.295±0.002 eV for the core-hole ion and a lifetime width of 45 meV. Numerous vibrational lines are observed in the SiF4 Si 2p photoelectron spectrum. The Z+1 core-equivalent model is assessed and changes in the molecular geometries and bonding properties of the molecules upon ionization are discussed. © 1990 The American Physical Society.
引用
收藏
页码:2757 / 2760
页数:4
相关论文
共 50 条
  • [31] SURFACE SHIFTS IN THE IN 4D AND P 2P CORE-LEVEL SPECTRA OF INP(110)
    KENDELEWICZ, T
    MAHOWALD, PH
    BERTNESS, KA
    MCCANTS, CE
    LINDAU, I
    SPICER, WE
    PHYSICAL REVIEW B, 1987, 36 (12): : 6543 - 6546
  • [32] Dissociation dynamics of anionic and excited neutral fragments of gaseous SiCl4 following Cl 2p and Si 2p core-level excitations
    Chen, J. M.
    Lu, K. T.
    Lee, J. M.
    Chou, T. L.
    Chen, H. C.
    Chen, S. A.
    Haw, S. C.
    Chen, T. H.
    NEW JOURNAL OF PHYSICS, 2008, 10
  • [33] EFFECT OF H-2 DILUTION ON THE GROWTH OF LOW-TEMPERATURE AS-DEPOSITED POLY-SI FILMS USING SIF4/SIH4/H-2 PLASMA
    KIM, SK
    PARK, KC
    JANG, J
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (10) : 5115 - 5118
  • [34] Atomic origins of Si 2p and Au 4f surface core-level shifts on Au/Si(111)-(5 x 2)
    Kwon, Se Gab
    Kang, Myung Ho
    PHYSICAL REVIEW B, 2015, 92 (19)
  • [35] A multi-coincidence study of the double, triple photoionization and fragmentation of the SiF4 molecule around the Si 2p edge
    Santos, ACF
    Lucas, CA
    de Souza, GGB
    CHEMICAL PHYSICS, 2002, 282 (02) : 315 - 326
  • [36] VERY-LOW-TEMPERATURE PREPARATION OF POLY-SI FILMS BY PLASMA CHEMICAL VAPOR-DEPOSITION USING SIF4/SIH4/H2 GASES
    MOHRI, M
    KAKINUMA, H
    SAKAMOTO, M
    SAWAI, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (5A): : L779 - L782
  • [37] Electronic states and chemical reactivity of Si(100)c(4 x 2) surface at low temperature studied by high resolution Si 2p core level photoelectron spectroscopy
    Machida, S
    Nagao, M
    Yamamoto, S
    Kakefuda, Y
    Mukai, K
    Yamashita, Y
    Yoshinobu, J
    SURFACE SCIENCE, 2003, 532 : 716 - 720
  • [38] Thickness dependence of H radical treatment of Si thin films deposited by plasma-enhanced chemical vapor deposition using SiF4/SiH4/H2 gases
    Shirafuji, Tatsuru
    Kondo, Hisao
    Tachibana, Kunihide
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (4 A): : 2047 - 2051
  • [39] Ge/Si(001)c(4X2) interface formation studied by high-resolution Ge 3d and Si 2p core-level spectroscopy
    Larciprete, R
    De Padova, P
    Quaresima, C
    Ottaviani, C
    Perfetti, P
    Peloi, M
    PHYSICAL REVIEW B, 2000, 61 (23) : 16006 - 16014
  • [40] Thickness dependence of H radical treatment of Si thin films deposited by plasma-enhanced chemical vapor deposition using SiF4/SiH4/H-2 gases
    Shirafuji, T
    Kondo, H
    Tachibana, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (4A): : 2047 - 2051