CHARGING AND DISCHARGING CHARACTERISTICS OF MCHDS STRUCTURES

The photocharging characteristics and isothermal depolarization of charge in metal-chalcogenide glass semiconductor-dielectric-semiconductor (MChDS) structures have been studied. Photocharging is explained by the change in the trap population in the chalcogenide glass semiconductor (ChGS). It has been found that dark discharging is due to thermofield emission of holes from traps according to the Poole-Frenkel law. The energy distribution of the filled traps is quasicontinuous with an asymmetrical maximum in the energy held of 0.70-0.90 eV for As2Se3 and 0.85-1.05 eV for As2S3. Parameters in the writing and read-out regimes demonstrate the MChDS structure as an image device.