CHARGING AND DISCHARGING CHARACTERISTICS OF MCHDS STRUCTURES

被引：0
|
作者：
ANDRIESH, AM
MALKOV, SA
VERLAN, VI
机构：
[1] Institute of Applied Physics, Academy of Sciences of Moldova, Kishinev, 277028
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1994年 / 77卷 / 06期
关键词：
D O I：
10.1080/00207219408926119
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The photocharging characteristics and isothermal depolarization of charge in metal-chalcogenide glass semiconductor-dielectric-semiconductor (MChDS) structures have been studied. Photocharging is explained by the change in the trap population in the chalcogenide glass semiconductor (ChGS). It has been found that dark discharging is due to thermofield emission of holes from traps according to the Poole-Frenkel law. The energy distribution of the filled traps is quasicontinuous with an asymmetrical maximum in the energy held of 0.70-0.90 eV for As2Se3 and 0.85-1.05 eV for As2S3. Parameters in the writing and read-out regimes demonstrate the MChDS structure as an image device.
引用
收藏
页码：975 / 980
页数：6
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