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- [3] QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 756 - 761DUPUIS, RDDAPKUS, PDKOLBAS, RMHOLONYAK, N
- [4] CONTINUOUS ROOM-TEMPERATURE MULTIPLE-QUANTUM-WELL ALXGA1-XAS-GAAS INJECTION-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION[J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 487 - 489DUPUIS, RDDAPKUS, PDHOLONYAK, NKOLBAS, RM
- [5] LOW-TEMPERATURE OPERATION OF MULTIPLE QUANTUM-WELL ALXGA1-XAS-GAAS P-N HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5830 - 5834VOJAK, BAKIRCHOEFER, SWHOLONYAK, NCHIN, RDUPUIS, RDDAPKUS, PD
- [6] ROOM-TEMPERATURE CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS GROWN ON SI[J]. APPLIED PHYSICS LETTERS, 1987, 51 (09) : 637 - 639DEPPE, DGHOLONYAK, NNAM, DWHSIEH, KCJACKSON, GSMATYI, RJSHICHIJO, HEPLER, JECHUNG, HF
- [7] ROOM-TEMPERATURE OPERATION OF GA(1-X)A1XAS-GAAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALLORGANIC CHEMICAL VAPOR-DEPOSITION[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) : 1195 - 1196DUPUIS, RDDAPKUS, PD
- [8] PHOTOLUMINESCENCE STUDY ON THE INTERFACE OF A GAAS/ALXGA1-XAS HETEROSTRUCTURE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (02) : 460 - 464AKIMOTO, KTAMAMURA, KOGAWA, JMORI, YKOJIMA, C
- [9] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION[J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 466 - 468DUPUIS, RDDAPKUS, PD
- [10] THERMAL-BEHAVIOR AND STABILITY OF ROOM-TEMPERATURE CONTINUOUS ALXGA1-XAS-GAAS QUANTUM WELL HETEROSTRUCTURE LASERS GROWN ON SI[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2457 - 2457HALL, DCDEPPE, DGHOLONYAK, NMATYI, RJSHICHIJO, HEPLER, JE