QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：12

作者：

DUPUIS, RD

DAPKUS, PD

KOLBAS, RM

HOLONYAK, N

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1979年 / 15卷 / 08期

关键词：

D O I：

10.1109/JQE.1979.1070091

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：756 / 761

页数：6

共 50 条

[1] THE GROWTH OF ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
[J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1980, 30 (03) : 288 - &
[2] LOW-TEMPERATURE OPERATION OF MULTIPLE QUANTUM-WELL ALXGA1-XAS-GAAS P-N HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
VOJAK, BA
KIRCHOEFER, SW
HOLONYAK, N
CHIN, R
DUPUIS, RD
DAPKUS, PD
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5830 - 5834
[3] TUNNEL INJECTION AND PHONON-ASSISTED RECOMBINATION IN MULTIPLE QUANTUM-WELL ALXGA1-XAS-GAAS P-N HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
VOJAK, BA
HOLONYAK, N
CHIN, R
REZEK, EA
DUPUIS, RD
DAPKUS, PD
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5835 - 5840
[4] BANDFILLING IN METALORGANIC CHEMICAL VAPOR-DEPOSITED ALXGA1-XAS-GAAS-ALXGA1-XAS QUANTUM-WELL HETEROSTRUCTURE LASERS
HOLONYAK, N
KOLBAS, RM
REZEK, EA
CHIN, R
DUPUIS, RD
DAPKUS, PD
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5392 - 5397
[5] CONTINUOUS ROOM-TEMPERATURE MULTIPLE-QUANTUM-WELL ALXGA1-XAS-GAAS INJECTION-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
HOLONYAK, N
KOLBAS, RM
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 487 - 489
[6] 700-H CONTINUOUS ROOM-TEMPERATURE OPERATION OF ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 311 - 314
[7] PHONON CONTRIBUTION TO METALORGANIC CHEMICAL VAPOR-DEPOSITED ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASER OPERATION
VOJAK, BA
HOLONYAK, N
LAIDIG, WD
HESS, K
COLEMAN, JJ
DAPKUS, PD
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 959 - 968
[8] 1800-HOUR CONTINUOUS OPERATION OF CW ROOM-TEMPERATURE ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1837 - 1838
[9] PHOTOLUMINESCENCE STUDY ON THE INTERFACE OF A GAAS/ALXGA1-XAS HETEROSTRUCTURE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
AKIMOTO, K
TAMAMURA, K
OGAWA, J
MORI, Y
KOJIMA, C
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (02) : 460 - 464
[10] HIGH-PRESSURE EXPERIMENTS ON ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS
KIRCHOEFER, SW
HOLONYAK, N
HESS, K
GULINO, DA
DRICKAMER, HG
COLEMAN, JJ
DAPKUS, PD
[J]. SOLID STATE COMMUNICATIONS, 1982, 42 (09) : 633 - 636

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