THERMAL-BEHAVIOR AND STABILITY OF ROOM-TEMPERATURE CONTINUOUS ALXGA1-XAS-GAAS QUANTUM WELL HETEROSTRUCTURE LASERS GROWN ON SI

被引：0

作者：

HALL, DC

DEPPE, DG

HOLONYAK, N

MATYI, RJ

SHICHIJO, H

EPLER, JE

机构：

[1] UNIV ILLINOIS,CTR COMPOUND SEMICOND MICROELECTR,ELECT ENGN RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[3] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

[4] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 12期

关键词：

D O I：

10.1109/16.8901

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2457 / 2457

页数：1

共 50 条

[1] THERMAL-BEHAVIOR AND STABILITY OF ROOM-TEMPERATURE CONTINUOUS ALXGA1-XAS-GAAS QUANTUM WELL HETEROSTRUCTURE LASERS GROWN ON SI
HALL, DC
DEPPE, DG
HOLONYAK, N
MATYI, RJ
SHICHIJO, H
EPLER, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) : 2854 - 2860
[2] ROOM-TEMPERATURE CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS GROWN ON SI
DEPPE, DG
HOLONYAK, N
NAM, DW
HSIEH, KC
JACKSON, GS
MATYI, RJ
SHICHIJO, H
EPLER, JE
CHUNG, HF
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (09) : 637 - 639
[3] CONTINUOUS ROOM-TEMPERATURE LASER OPERATION OF ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN ON SI
DEPPE, DG
HOLONYAK, N
NAM, DW
HSIEH, KC
KALISKI, RW
MATYI, RJ
LEE, JW
SHICHIJO, H
EPLER, JE
BURNHAM, RD
CHUNG, HF
PAOLI, TL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2380 - 2380
[4] STABLE CONTINUOUS ROOM-TEMPERATURE LASER OPERATION OF ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN ON SI
NAM, DW
HOLONYAK, N
HSIEH, KC
KALISKI, RW
LEE, JW
SHICHIJO, H
EPLER, JE
BURNHAM, RD
PAOLI, TL
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 39 - 41
[5] EFFECTS OF MICROCRACKING ON ALXGA1-XAS-GAAS QUANTUM WELL LASERS GROWN ON SI
DEPPE, DG
HALL, DC
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MATYI, RJ
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EPLER, JE
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (10) : 874 - 876
[6] LOW-TEMPERATURE OPERATING LIFE OF CONTINUOUS 300-K ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS GROWN ON SI
HALL, DC
HOLONYAK, N
DEPPE, DG
RIES, MJ
MATYI, RJ
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EPLER, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (10) : 6844 - 6849
[7] CONTINUOUS ROOM-TEMPERATURE MULTIPLE-QUANTUM-WELL ALXGA1-XAS-GAAS INJECTION-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
HOLONYAK, N
KOLBAS, RM
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 487 - 489
[8] 700-H CONTINUOUS ROOM-TEMPERATURE OPERATION OF ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 311 - 314
[9] QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
KOLBAS, RM
HOLONYAK, N
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 756 - 761
[10] 1800-HOUR CONTINUOUS OPERATION OF CW ROOM-TEMPERATURE ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1837 - 1838

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