CHARACTERISTICS OF CL-DOPED ZNSE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：161
|
作者：
OHKAWA, K
MITSUYU, T
YAMAZAKI, O
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 08期
关键词：
D O I：
10.1063/1.339323
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3216 / 3221
页数：6
相关论文
共 50 条
  • [21] CRYSTALLINE DEFECTS IN ZNSE LAYERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    ENDOH, Y
    TANIMURA, J
    IMAIZUMI, M
    SUITA, M
    OHTSUKA, K
    ISU, T
    NUNOSHITA, M
    JOURNAL OF CRYSTAL GROWTH, 1995, 154 (1-2) : 41 - 46
  • [22] Photoluminescence characteristics of Sn-doped, molecular-beam-epitaxy-grown ZnSe crystal layers
    Kuronuma, Ryouichi
    Miyamoto, Yoshinobu
    Mita, Yoh
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (10A): : 7789 - 7791
  • [23] Photoluminescence characteristics of Pb-doped, molecular-beam-epitaxy grown ZnSe crystal layers
    Mita, Y
    Kuronuma, R
    Inoue, M
    Sasaki, S
    Miyamoto, Y
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (04) : 1904 - 1908
  • [24] MOLECULAR-BEAM EPITAXY OF INDIUM-DOPED ZNSE
    YAO, T
    SERA, T
    MAKITA, Y
    MAEKAWA, S
    SURFACE SCIENCE, 1979, 86 (JUL) : 120 - 125
  • [25] ELECTRICAL AND OPTICAL CHARACTERIZATION OF MOLECULAR-BEAM EPITAXY GROWN GA-DOPED ZNSE
    VAZIRI, M
    REIFENBERGER, R
    GUNSHOR, RL
    KOLODZIEJSKI, LA
    VENKATESAN, S
    PIERRET, RF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 253 - 258
  • [26] THERMAL-STABILITY OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
    NISHIKAWA, Y
    ISHIKAWA, M
    PARBROOK, PJ
    ONOMURA, M
    SAITO, S
    HATAKOSHI, GI
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 807 - 811
  • [27] ELECTRICAL CHARACTERIZATION OF GALLIUM PLANAR-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
    SHIBLI, SM
    TAMARGO, MC
    DEMIGUEL, JL
    SKROMME, BJ
    NAHORY, RE
    FARRELL, HH
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) : 4295 - 4300
  • [28] Dynamic mechanisms in photoluminescence of gallium-doped ZnSe grown by molecular-beam epitaxy
    Wang, SZ
    Yoon, SF
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) : 5091 - 5094
  • [29] Deep-level-transient spectroscopy of heavily Al-doped ZnSe layers grown by molecular-beam epitaxy
    Oh, D.C.
    Takai, T.
    Hanada, T.
    Cho, M.W.
    Yao, T.
    Song, J.S.
    Chang, J.H.
    Lu, F.
    1600, American Institute of Physics Inc. (96):
  • [30] Deep-level-transient spectroscopy of heavily Al-doped ZnSe layers grown by molecular-beam epitaxy
    Oh, DC
    Takai, T
    Hanada, T
    Cho, MW
    Yao, T
    Song, JS
    Chang, JH
    Lu, F
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (12) : 7332 - 7337
12345