Deep-level-transient spectroscopy of heavily Al-doped ZnSe layers grown by molecular-beam epitaxy

被引：0
|
作者：
Oh, D.C. [1 ]
Takai, T. [1 ]
Hanada, T. [1 ]
Cho, M.W. [1 ,5 ]
Yao, T. [1 ,5 ]
Song, J.S. [2 ]
Chang, J.H. [3 ]
Lu, F. [4 ]
机构：
[1] Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan
[2] NeosemiTech. Corporate, 357-13 Dangha-dong, Seo-ku, Inchon 404-30, Korea, Republic of
[3] Department of Applied Physics, Korea Maritime University, I Dongsam-dong, Yeoungdo-koo, Pusan 606-791, Korea, Republic of
[4] Department of Physics, Fudan University, 220 Handan Road, Shanghai 200433, China
[5] Ctr. for Interdisciplinary Research, Tohoku University, Aramakiazaaoba, Aoba-ku, Sendai 980-8578, Japan
来源：
| 1600年 / American Institute of Physics Inc.卷 / 96期
关键词：
The authors are grateful to Marubun Research Promotion Foundation and The Nippon Foundation for their support. The authors would also like to thank R. Buckmaster for his help on the manuscript;
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