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- [3] ARSENIC DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 187 - 191
- [5] CHARACTERISTICS OF P-TYPE ZNSE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY WITH RADICAL DOPING JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (2A): : L152 - L155
- [6] NITROGEN-DOPED ZNSE AND ZNSSE GROWN BY MOLECULAR-BEAM EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (02): : L221 - L224
- [8] Spectroscopy of the phosphorus impurity in ZnSe epitaxial layers grown by molecular-beam epitaxy PHYSICAL REVIEW B, 2000, 61 (23): : 15789 - 15796
- [9] Characteristics of ZnSe:Ga:P layers grown by molecular beam epitaxy BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 86 - 89