CHARACTERISTICS OF P-TYPE ZNSE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY WITH RADICAL DOPING

被引：196
|
作者：
OHKAWA, K
KARASAWA, T
MITSUYU, T
机构：
[1] Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., Moriguchi, Osaka
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 2A期
关键词：
ZNSE; P-TYPE; PHOTOLUMINESCENCE; HALL MEASUREMENT; PT ELECTRODE;
D O I：
10.1143/JJAP.30.L152
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
p-type ZnSe layers have been grown by molecular beam epitaxy using nitrogen radical doping. We have employed Pt as the electrode material for p-type ZnSe. The Pt electrodes markedly reduced contact resistances. The p-type conduction was confirmed by Hall measurement. Carrier concentration was 4.4 x 10(15) cm-3. Hall mobility was as high as 86 cm2/V.s because of good crystallinity. The p-type ZnSe layers exhibited the 2.616-eV emission from recombination between free electrons and acceptor holes (FA) in room-temperature photoluminescence measurement. The FA emission provides evidence that the layers are p-type ZnSe.
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收藏
页码：L152 / L155
页数：4
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