HIGH-DETECTIVITY GAAS QUANTUM-WELL INFRARED DETECTORS WITH PEAK RESPONSIVITY AT 8.2-MU-M

被引：1
|
作者：
BECK, WA
机构：
[1] Martin Marietta Laboratories, Baltimore
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 07期
关键词：
D O I：
10.1063/1.348426
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Recent measurements of less-than-full shot noise in GaAs/AlGaAs quantum-well infrared detectors can be explained in terms of standard photoconductor generation-recombination theory. Therefore, more complex models are not yet necessary.
引用
收藏
页码：4129 / 4129
页数：1
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