HIGH-DETECTIVITY INAS0.85SB0.15/INAS INFRARED (1.8-4.8 MU-M) DETECTORS

被引:33
|
作者
MOHAMMED, K
CAPASSO, F
LOGAN, RA
VANDERZIEL, JP
HUTCHINSON, AL
机构
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D O I
10.1049/el:19860150
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:215 / 216
页数:2
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  • [1] LPE growth and characterization of mid-infrared InAs0.85Sb0.15 film on InAs substrate
    Wang, Q. W.
    Sun, C. H.
    Hu, S. H.
    He, J. Y.
    Wu, J.
    Chen, X.
    Deng, H. Y.
    Dai, N.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2011, 327 (01) : 63 - 67
  • [2] HIGH-DETECTIVITY GAAS QUANTUM-WELL INFRARED DETECTORS WITH PEAK RESPONSIVITY AT 8.2 MU-M
    JANOUSEK, BK
    DAUGHERTY, MJ
    BLOSS, WL
    ROSENBLUTH, ML
    OLOUGHLIN, MJ
    KANTER, H
    DELUCCIA, FJ
    PERRY, LE
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (12) : 7608 - 7611
  • [3] INAS0.85SB0.15 INFRARED PHOTODIODES GROWN ON GAAS AND GAAS-COATED SI BY MOLECULAR-BEAM EPITAXY
    DOBBELAERE, W
    DEBOECK, J
    HEREMANS, P
    MERTENS, R
    BORGHS, G
    LUYTEN, W
    VANLANDUYT, J
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (26) : 3256 - 3258
  • [4] High-detectivity InAs nanowire photodetectors with spectral response from ultraviolet to near-infrared
    Zhe Liu
    Tao Luo
    Bo Liang
    Gui Chen
    Gang Yu
    Xuming Xie
    Di Chen
    Guozhen Shen
    [J]. Nano Research, 2013, 6 : 775 - 783
  • [5] HIGH-DETECTIVITY GAAS QUANTUM-WELL INFRARED DETECTORS WITH PEAK RESPONSIVITY AT 8.2-MU-M
    BECK, WA
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (07) : 4129 - 4129
  • [6] High-detectivity InAs nanowire photodetectors with spectral response from ultraviolet to near-infrared
    Liu, Zhe
    Luo, Tao
    Liang, Bo
    Chen, Gui
    Yu, Gang
    Xie, Xuming
    Chen, Di
    Shen, Guozhen
    [J]. NANO RESEARCH, 2013, 6 (11) : 775 - 783
  • [7] HIGH-DETECTIVITY GAAS QUANTUM-WELL INFRARED DETECTORS WITH PEAK RESPONSIVITY AT 8.2-MU-M - REPLY
    JANOUSEK, BK
    DAUGHERTY, MJ
    BLOSS, WL
    LACOE, R
    OLOUGHLIN, MJ
    KANTER, H
    DELUCCIA, FJ
    PERRY, LE
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (07) : 4130 - 4131
  • [8] High-detectivity, normal-incidence, mid-infrared (λ∼4 μm)InAs/GaAs quantum-dot detector operating at 150 K
    Stiff, AD
    Krishna, S
    Bhattacharya, P
    Kennerly, S
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (03) : 421 - 423
  • [9] MOLECULAR-BEAM EPITAXIAL-GROWTH, CHARACTERIZATION AND PERFORMANCE OF HIGH-DETECTIVITY GAINASSB/GASB PIN DETECTORS OPERATING AT 2.0 TO 2.6 MU-M
    LI, AZ
    ZHONG, JQ
    ZHENG, YL
    WANG, JX
    RU, GP
    BI, WG
    QI, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1375 - 1378
  • [10] High-detectivity infrared photodetector based on InAs submonolayer quantum dots grown on GaAs(001) with a 2 x 4 surface reconstruction
    Alzeidan, A.
    Claro, M. S.
    Quivy, A. A.
    [J]. JOURNAL OF APPLIED PHYSICS, 2019, 126 (22)