STRAINED INGAAS/ALGAAS QUANTUM-WELL INFRARED DETECTORS AT 4.5 MU-M

被引：34
|
作者：
FIORE, A
ROSENCHER, E
BOIS, P
NAGLE, J
LAURENT, N
机构：
[1] Laboratoire Central de Recherches de THOMSON-CSF, F-91404 Orsay, Domaine de Corbeville
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 04期
关键词：
D O I：
10.1063/1.111135
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate midinfrared photodetection at lambda=4.5 mu m in a multi-quantum well detector using a strained InGaAs/AlGaAs alloy grown on a GaAs substrate. The detector shows very low dark current of a few pA, a peak unpolarized light responsivity R=12 mA/W for an external 45 degrees angle of incidence, and a background-limited detectivity D*(BL)=4X10(10) cm Hz(1/2)/W at temperatures up to 95 K in the same conditions. This opens the way to high performance 3-5 and 8-12 mu m GaAs-based multispectral detectors
引用
收藏
页码：478 / 480
页数：3
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