DEGRADATION EFFECTS AND SI-DEPTH PROFILING IN PHOTORESISTS USING ION-BEAM ANALYSIS

被引：3
|
作者：
VANIJZENDOORN, LJ
SCHELLEKENS, JPW
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 40-1卷
关键词：
D O I：
10.1016/0168-583X(89)90482-5
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：806 / 808
页数：3
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