AN ELECTRON-GUN FOR ANNEALING OF ION-IMPLANTED MATERIALS

被引:0
|
作者
LULLI, G [1 ]
MERLI, PG [1 ]
机构
[1] CNR,INST LAMEL,I-40126 BOLOGNA,ITALY
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:C233 / C233
页数:1
相关论文
共 50 条
  • [1] PULSE ELECTRON ANNEALING OF ION-IMPLANTED INP
    DAVIES, DE
    LORENZO, JP
    RYAN, TG
    FITZGERALD, JJ
    APPLIED PHYSICS LETTERS, 1979, 35 (08) : 631 - 633
  • [2] PULSED ELECTRON-BEAM ANNEALING ION-IMPLANTED MATERIALS - EQUIPMENT AND RESULTS
    LITTLE, RG
    GREENWALD, AC
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (02) : 1751 - 1753
  • [3] PULSED ELECTRON-BEAM ANNEALING ION-IMPLANTED MATERIALS - EQUIPMENT AND RESULTS
    LITTLE, RG
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (07): : 798 - 798
  • [4] TRANSIENT ANNEALING OF ION-IMPLANTED SEMICONDUCTOR-MATERIALS
    WILSON, SR
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2): : 307 - 315
  • [5] ELECTRON-BEAM ANNEALING OF ION-IMPLANTED AL
    WAMPLER, WR
    FOLLSTAEDT, DM
    PICRAUX, ST
    APPLIED PHYSICS LETTERS, 1980, 36 (05) : 366 - 368
  • [6] ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON
    MCMAHON, RA
    AHMED, H
    ELECTRONICS LETTERS, 1979, 15 (02) : 45 - 47
  • [7] Annealing of ion-implanted GaN
    Burchard, A.
    Haller, E.E.
    Stötzler, A.
    Weissenborn, R.
    Deicher, M.
    Physica B: Condensed Matter, 1999, 273 : 96 - 100
  • [8] Annealing of ion-implanted GaN
    Burchard, A
    Haller, EE
    Stötzler, A
    Weissenborn, R
    Deicher, M
    PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 96 - 100
  • [9] CONTINUOUS ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON
    BUDISHEVSKY, VS
    GROTZSCHEL, R
    KAGADEI, VA
    LEBEDEVA, NI
    PROSKUROVSKY, DI
    YANKELEVICH, EB
    EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 262 - 264
  • [10] PULSED ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SEMICONDUCTORS
    DVURECHENSKY, AV
    KASHNIKOV, BP
    SMIRNOV, LS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C96 - C96