PHOTOVOLTAIC GAAS QUANTUM-WELL INFRARED DETECTORS AT 4.2 MU-M USING INDIRECT ALXGA1-X BARRIERS

被引：48
|
作者：
LEVINE, BF
GUNAPALA, SD
KOPF, RF
机构：
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 14期
关键词：
D O I：
10.1063/1.105175
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have demonstrated the first bound to continuum state GaAs/Al(x)Ga(1-x)As quantum well infrared detector which has a peak response lambda-p = 4.2-mu-m in the center of the midwavelength (lambda = 3-5-mu-m) infrared band. Although the detector uses indirect Al(x)Ga(1-x)As barriers, excellent hot-electron transport and a high detectivity D-lambda* = 10(12) cm square-root Hz/W were achieved.
引用
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页码：1551 / 1553
页数：3
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