ENHANCED ANNEALING KINETICS IN ION-IMPLANTED INXAL1-XAS STUDIED BY X-RAY-DIFFRACTOMETRY

被引：1

作者：

CLARKE, R ^{[1
]}

DOSPASSOS, W ^{[1
]}

CHAN, YJ ^{[1
]}

PAVLIDIS, D ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT PHYS,ANN ARBOR,MI 48109

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 20期

关键词：

D O I：

10.1063/1.104895

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a rapid thermal annealing (RTA) enhancement of the structural coherence of Si-implanted InxAl1-xAs (x almost-equal-to 0.54) layers on (100)InP. Under these annealing conditions (750-degrees-C for 30 s), the enhancement occurs only in implanted samples and is characterized by the appearance of pendellosung fringes in double-crystal x-ray diffraction. Measurements of the parallel (epsilon-parallel-to) and perpendicular (epsilon-perpendicular-to) lattice mismatch show a slight relaxation in epsilon-perpendicular-to during RTA without significant generation of dislocations (epsilon-parallel-to = 0). The results suggest an electronic mechanism for the increased efficiency of RTA in implanted samples.

引用

页码：2267 / 2269

页数：3

共 20 条

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