X-RAY-DIFFRACTOMETRY OF THE MODIFICATION OF THE STRUCTURE OF ION-IMPLANTED SILICON NEAR-THE-SURFACE LAYERS AFTER THE PULSE LASER ANNEALING

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BUSHUEV, VA
PETRAKOV, AP
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PISMA V ZHURNAL TEKHNICHESKOI FIZIKI | 1992年 / 18卷 / 08期
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O59 [应用物理学];
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页码：77 / 81
页数：5
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