X-ray-diffractometry of structural changes occurring in surface layers of silicon in the process of laser diffusion of boron

被引：6

作者：

Petrakov, AP ^{[1
]}

Golubev, EA ^{[1
]}

机构：

[1] Syktyvkar State Univ, Syktyvkar 167001, Russia

来源：

PHYSICS OF THE SOLID STATE | 1998年 / 40卷 / 01期

关键词：

Spectroscopy; Silicon; State Physics; Boron; Surface Layer;

D O I：

10.1134/1.1130254

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of laser diffusion of boron on the structure of surface layers in silicon single crystals was investigated by diffracted-reflection curve and three-crystal x-ray diffractometry methods. Deformation and static Debye-Waller factor distribution profiles were determined numerically by varying the parameters of the problem. (C) 1998 American Institute of Physics.

引用

页码：140 / 143

页数：4

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[1] X-ray-diffractometry of structural changes occurring in surface layers of silicon in the process of laser diffusion of boron
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