X-ray diffractometry diagnosis of laser diffusion of aluminum into silicon

被引：5
|
作者：
Bushuev, VA [1 ]
Petrakov, AP [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Moscow 119899, Russia
来源：
TECHNICAL PHYSICS | 2000年 / 45卷 / 05期
关键词：
D O I：
10.1134/1.1259685
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-resolution X-ray diffractometry was used to study alterations of the structure of single-crystal silicon taking place in the process of nonequilibrium solid-state diffusion of aluminum atoms occurring under heating of the near-surface layer by radiation of a CO2 laser with pulse durations 1, 2, and 3 s. Crystal lattice deformation profiles, diffusion lengths, and densities of dislocation loops have been determined. (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码：613 / 617
页数：5
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