PRECIPITATION OF SIO2 ON DISLOCATIONS IN POLYCRYSTALLINE SILICON WITH A HIGH-CARBON CONCENTRATION

被引：2
|
作者：
GERVAIS, A
MOUDDAAZZEM, T
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 02期
关键词：
D O I：
10.1063/1.337430
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：789 / 793
页数：5
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