共 50 条
- [3] GRAIN-BOUNDARY DIFFUSION IN POLYCRYSTALLINE SILICON FILMS ON SIO2 JOURNAL DE PHYSIQUE, 1982, 43 (NC1): : 363 - 368
- [7] Photoluminescence properties of thermal SiO2 films implanted by silicon and nitrogen ions NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 148 (1-4): : 1002 - 1006
- [8] Photoluminescence properties of thermal SiO2 films implanted by silicon and nitrogen ions Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1999, 148 (1-4): : 1002 - 1006
- [9] Transportation of carriers in silicon implanted SiO2 films during ionizing radiation NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 272 : 266 - 270
- [10] Polycrystalline Silicon Films on SiO2 Substrate Treated by Excimer Laser Annealing ADVANCED ENGINEERING MATERIALS III, PTS 1-3, 2013, 750-752 : 946 - +