RADIATION-INDUCED INTERFACE-STATE GENERATION IN REOXIDIZED NITRIDED SIO2

被引：7

作者：

RAO, VR ^{[1
]}

VASI, J ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,DEPT ELECT ENGN,BOMBAY 400076,INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 02期

关键词：

D O I：

10.1063/1.350390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reoxidized nitrided oxide is compared with nitrided oxides and dry SiO2 for radiation-induced interface-state generation (DELTA-D(itm)) and midgap voltage shifts (DELTA-V(mg)). The suppression of DELTA-D(itm) observed with heavy nitridation or reoxidation is explained in terms of the trapped-hole recombination model together with the shifting of the location of the trapped positive charge away from the Si interface. This model can also explain the effect of nitrogen annealing on nitrided oxides.

引用

页码：1029 / 1031

页数：3

共 50 条

[41] RADIATION-INDUCED DEGRADATION OF SI/SIO2 STRUCTURES AND THE NATURE OF DEFECTS
FUSSEL, W
SCHMIDT, M
FLIETNER, H
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 65 (1-4): : 238 - 242
[42] ON THE PHYSICAL MODELS OF ANNEALING OF RADIATION-INDUCED DEFECTS IN AMORPHOUS SIO2
DEVINE, RAB
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 46 (1-4): : 261 - 264
[43] SPATIAL-DISTRIBUTION OF RADIATION-INDUCED INTERFACE TRAPS UNDER THE GATE OF AN AL/SIO2/SI CAPACITOR
ZEKERIYA, V
WONG, A
MA, TP
APPLIED PHYSICS LETTERS, 1985, 46 (01) : 80 - 82
[44] SPATIAL DISTRIBUTION OF RADIATION-INDUCED INTERFACE TRAPS UNDER THE GATE OF AN Al/SiO2/Si CAPACITOR.
Zekeriya, Viktor
Wong, Amy
Ma, T-P.
1600, (46):
[45] Interface nitridation model of the rapid thermal nitrided SiO2 film
Chen, Pusheng
Wang, Yunxiang
Wang, Yue
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics, 1995, 15 (01): : 71 - 79
[46] Distribution and chemical bonding of N at NO nitrided SiC/SiO2 interface
Griffith Univ, Nathan, Australia
Conf Optoelectron Microelectron Mater Dev Proc COMMAD, (164-166):
[47] ION IMPLANTATION-INDUCED AND RADIATION-INDUCED STRUCTURAL MODIFICATIONS IN AMORPHOUS SIO2
DEVINE, RAB
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 152 (01) : 50 - 58
[48] Sn+-implantation and radiation-induced structural modifications in amorphous SiO2
Angermann, T
Dunken, HH
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1996, 100 (09): : 1535 - 1538
[49] Microscopic mechanisms of radiation-induced proton density decay in SiO2 films
Karna, SP
Pugh, RD
Chavez, JR
Shedd, W
Brothers, CP
Singaraju, BK
Vitiello, M
Pacchioni, G
Devine, RA
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (06) : 2408 - 2412
[50] Radiation-induced effects in SiO2 protective coatings on polymeric spacecraft materials
Coia, C
Fozza, AC
Wertheimer, MR
Czeremuszkin, G
Houdayer, A
PROTECTION OF SPACE MATERIALS FROM THE SPACE ENVIRONMENT, 2001, 4 : 281 - 290

← 1 2 3 4 5 →