Interface nitridation model of the rapid thermal nitrided SiO2 film

被引：0

作者：

Chen, Pusheng ^{[1
]}

Wang, Yunxiang ^{[1
]}

Wang, Yue ^{[1
]}

机构：

[1] South China Univ of Tech, Guangzhou, China

来源：

Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 1995年 / 15卷 / 01期

关键词：

Nitriding;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：71 / 79

共 50 条

[1] RAPID THERMAL NITRIDATION OF SIO2 FOR NITROXIDE THIN DIELECTRICS
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[2] EFFECTS OF THERMAL NITRIDATION ON THE RADIATION HARDNESS OF THE SIO2/SI INTERFACE
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[4] CHARACTERIZATION OF RAPID THERMALLY NITRIDED SIO2 SI INTERFACE BY THE CONDUCTANCE TECHNIQUE
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[7] An atomic model of the nitrous-oxide-nitrided SiO2/Si interface
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[8] ENHANCED IMPURITY DIFFUSION RESULTING FROM RAPID THERMAL NITRIDATION OF THIN SIO2
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[9] RAPID THERMAL NITRIDATION OF SIO2-FILMS
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[10] STUDY OF THE KINETICS AND MECHANISM OF THE THERMAL NITRIDATION OF SIO2
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