Interface nitridation model of the rapid thermal nitrided SiO2 film

被引：0
|
作者：
Chen, Pusheng [1 ]
Wang, Yunxiang [1 ]
Wang, Yue [1 ]
机构：
[1] South China Univ of Tech, Guangzhou, China
来源：
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 1995年 / 15卷 / 01期
关键词：
Nitriding;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：71 / 79
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