共 50 条
- [41] RECOMBINATION LEVEL IN NORMAL-TYPE GERMANIUM IRADIATED WITH ELECTRONS SOVIET PHYSICS-SOLID STATE, 1963, 4 (08): : 1565 - 1567
- [44] KINETICS AND MECHANISM OF POROUS LAYER GROWTH DURING NORMAL-TYPE SILICON ANODIZATION IN HF SOLUTION SURFACE TECHNOLOGY, 1983, 20 (03): : 265 - 277
- [47] ANODIC PROCESSES AT NORMAL-TYPE AND PARA-TYPE GAP ELECTRODES BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1977, 81 (11): : 1186 - 1190
- [50] LPE GROWTH AND CHARACTERIZATION OF GAAS-V PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 104 (02): : K121 - K126