PARAMETER EXTRACTION FOR LARGE-SIGNAL MODELING OF BIPOLAR JUNCTION TRANSISTORS

被引：3

作者：

ROHRINGER, NM

KREUZGRUBER, P

机构：

[1] Institut für Nachrichtentechnik und Hochfrequenztechnik, Technische Universität Wien, Wien, A-1040

来源：

INTERNATIONAL JOURNAL OF MICROWAVE AND MILLIMETER-WAVE COMPUTER-AIDED ENGINEERING | 1995年 / 5卷 / 03期

关键词：

D O I：

10.1002/mmce.4570050305

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

A quick and efficient parameter extraction method for Si-bipolar junction transistors, suited for nonlinear CAD, is presented. The large-signal parameters are extracted from S-parameter data measured at one bias point only. The model accounts for distributed base and bond wires. A comparison of simulated and measured values of reflection and transmission coefficients and nonlinear behavior of a single transistor shows the capability of the extraction method. (C) 1995 John Wiley and Sons, Inc.

引用

页码：161 / 172

页数：12

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