PARAMETER EXTRACTION FOR LARGE-SIGNAL MODELING OF BIPOLAR JUNCTION TRANSISTORS

被引：3
|
作者：
ROHRINGER, NM
KREUZGRUBER, P
机构：
[1] Institut für Nachrichtentechnik und Hochfrequenztechnik, Technische Universität Wien, Wien, A-1040
来源：
INTERNATIONAL JOURNAL OF MICROWAVE AND MILLIMETER-WAVE COMPUTER-AIDED ENGINEERING | 1995年 / 5卷 / 03期
关键词：
D O I：
10.1002/mmce.4570050305
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
A quick and efficient parameter extraction method for Si-bipolar junction transistors, suited for nonlinear CAD, is presented. The large-signal parameters are extracted from S-parameter data measured at one bias point only. The model accounts for distributed base and bond wires. A comparison of simulated and measured values of reflection and transmission coefficients and nonlinear behavior of a single transistor shows the capability of the extraction method. (C) 1995 John Wiley and Sons, Inc.
引用
收藏
页码：161 / 172
页数：12
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