共 50 条
- [43] Ion beam synthesis by high dose tungsten implantation into 6H-silicon carbide [J]. SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 541 - 544
- [46] Ion beam synthesis by tungsten implantation into 6H-silicon carbide at elevated temperatures [J]. III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 : 195 - 200
- [48] Epitaxial growth of graphene on 6H-silicon carbide substrate by simulated annealing method [J]. JOURNAL OF CHEMICAL PHYSICS, 2013, 139 (20):
- [50] Erbium-related band gap states in 4H-and 6H-silicon carbide [J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (04) : 2289 - 2291