DEMONSTRATING THE POTENTIAL OF 6H-SILICON CARBIDE FOR POWER DEVICES

被引：3
|
作者：
PALMOUR, JW [1 ]
EDMOND, JA [1 ]
CARTER, CH [1 ]
机构：
[1] CREE RES INC,DURHAM,NC 27713
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 11期
关键词：
D O I：
10.1109/16.239810
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：2129 / 2130
页数：2
相关论文
共 50 条
  • [21] High Power, Room Temperature Terahertz Emitters Based on Dopant Transitions in 6H-Silicon Carbide
    James Kolodzey
    Guang-Chi Xuan
    Peng-Cheng Lv
    Nathan Sustersic
    Xin Ma
    [J]. Journal of Electronic Science and Technology, 2014, (03) : 250 - 254
  • [22] Capacitance dispersion in ion implanted 4H and 6H-silicon carbide
    Evwaraye, AO
    Smith, SR
    Mitchel, WC
    Capano, MA
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (08) : 4465 - 4469
  • [23] Raman scattering from vapor phase epitaxial growth of silicon carbide on porous 6H-silicon carbide
    Spanier, JE
    Dunne, GT
    Rowland, LB
    Herman, IP
    [J]. COMPOUND SEMICONDUCTOR POWER TRANSISTORS II AND STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXII), 2000, 2000 (01): : 162 - 167
  • [24] A comparison of aluminum nitride freely nucleated and seeded on 6H-silicon carbide
    Edgar, JH
    Robins, LH
    Coatney, SE
    Liu, L
    Chaudhuri, J
    Ignatiev, K
    Rek, Z
    [J]. SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1599 - 1602
  • [25] Ion beam synthesis by tungsten-implantation into 6H-silicon carbide
    Weishart, H
    Steffen, HJ
    Matz, W
    Voelskow, M
    Skorupa, W
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 112 (1-4): : 338 - 341
  • [26] MAGNETIC CIRCULAR-DICHROISM OF A VANADIUM IMPURITY IN 6H-SILICON CARBIDE
    REINKE, J
    WEIHRICH, H
    GREULICHWEBER, S
    SPAETH, JM
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (10) : 1862 - 1867
  • [27] Excimer laser annealing of ion-implanted 6H-silicon carbide
    Hishida, Y
    Watanabe, M
    Nakashima, K
    Eryu, O
    [J]. SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 873 - 876
  • [28] Positron lifetime spectroscopic studies of as-grown 6H-silicon carbide
    Ling, CC
    Deng, AH
    Fung, S
    Beling, CD
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 70 (01): : 33 - 38
  • [29] Comparison of aluminum nitride freely nucleated and seeded on 6H-silicon carbide
    Edgar, J.H.
    Robins, L.H.
    Coatney, S.E.
    Liu, L.
    Chaudhuri, J.
    Ignatiev, K.
    Rek, Z.
    [J]. Materials Science Forum, 2000, 338
  • [30] Positron lifetime spectroscopic studies of as-grown 6H-silicon carbide
    C.C. Ling
    A.H. Deng
    S. Fung
    C.D. Beling
    [J]. Applied Physics A, 2000, 70 : 33 - 38
12345