DEPENDENCE OF SILICON SURFACE ELECTRONIC PARAMETERS ON SURFACE FERMI-LEVEL POSITION

被引：2
|
作者：
ADAMOWICZ, B
机构：
[1] Institute of Physics, Silesian Technical University, 44-100 Gliwice
来源：
VACUUM | 1994年 / 45卷 / 2-3期
关键词：
D O I：
10.1016/0042-207X(94)90162-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The surface Fermi level position Phi(s), the surface space charge Q(sc), and the surface recombination velocity S for real (111) surfaces of p- and n-type Si have been studied. Therefore we have measured the surface photovoltage and photoconductivity dependences vs light intensity photon energy and temperature from 300 to 430 K. The complementary character of S (Phi(s),) as well as Q(sc) (Phi(s)) dependences supports the view that the surface state distribution on the real semiconductor surface is determined mainly by the surface preparation process regardless of the type of bulk doping.
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页码：167 / 170
页数：4
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