DEPENDENCE OF SILICON SURFACE ELECTRONIC PARAMETERS ON SURFACE FERMI-LEVEL POSITION

The surface Fermi level position Phi(s), the surface space charge Q(sc), and the surface recombination velocity S for real (111) surfaces of p- and n-type Si have been studied. Therefore we have measured the surface photovoltage and photoconductivity dependences vs light intensity photon energy and temperature from 300 to 430 K. The complementary character of S (Phi(s),) as well as Q(sc) (Phi(s)) dependences supports the view that the surface state distribution on the real semiconductor surface is determined mainly by the surface preparation process regardless of the type of bulk doping.