DETERMINATION OF THE TRANSVERSE DELAYS IN THE GAAS/ALGAAS MODFETS

被引：0
|
作者：
GOEL, AK
XU, W
机构：
[1] Department of Electrical Engineering, Michigan Technological University, Houghton, Michigan
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1992年 / 5卷 / 09期
关键词：
PROPAGATION DELAYS; CAD; GALLIUM ARSENIDE; FIELD-EFFECT TRANSISTORS;
D O I：
10.1002/mop.4650050904
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have developed a computer-efficient algorithm and the related CAD-oriented software to calculate the transverse propagation delays in a GaAs/AlGaAs MODFET The model has been used to study the dependence of these delays on the various MODFET parameters. The results can be utilized for the optimization of highspeed circuits.
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页码：408 / 411
页数：4
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