DETERMINATION OF THE TRANSVERSE DELAYS IN THE GAAS/ALGAAS MODFETS

被引：0
|
作者：
GOEL, AK
XU, W
机构：
[1] Department of Electrical Engineering, Michigan Technological University, Houghton, Michigan
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1992年 / 5卷 / 09期
关键词：
PROPAGATION DELAYS; CAD; GALLIUM ARSENIDE; FIELD-EFFECT TRANSISTORS;
D O I：
10.1002/mop.4650050904
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have developed a computer-efficient algorithm and the related CAD-oriented software to calculate the transverse propagation delays in a GaAs/AlGaAs MODFET The model has been used to study the dependence of these delays on the various MODFET parameters. The results can be utilized for the optimization of highspeed circuits.
引用
下载
收藏
页码：408 / 411
页数：4
相关论文
共 50 条
  • [31] SCALING PROPERTIES AND SHORT-CHANNEL EFFECTS IN SUBMICROMETER ALGAAS/GAAS MODFETS - A MONTE-CARLO STUDY
    KIZILYALLI, IC
    ARTAKI, M
    SHAH, NJ
    CHANDRA, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (02) : 234 - 249
  • [32] ELIMINATION OF DRAIN I/V COLLAPSE IN MODFETS THROUGH THE USE OF THIN N-GAAS/ALGAAS SUPERLATTICE
    FISCHER, R
    MASSELINK, WT
    KLEM, J
    HENDERSON, T
    MORKOC, H
    ELECTRONICS LETTERS, 1984, 20 (18) : 743 - 744
  • [33] MOVPE GROWN HIGH-PERFORMANCE 0.25 MU-M ALGAAS/INGAAS/GAAS PSEUDOMORPHIC MODFETS
    THOMPSON, AG
    LEVY, HM
    MAO, BY
    MARTIN, G
    LEE, GY
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 921 - 925
  • [34] TUNNELING AND TRANSVERSE-WAVE VECTOR CONSERVATION IN GAAS/ALGAAS HETEROSTRUCTURES
    LEBENS, JA
    SILSBEE, RH
    WRIGHT, SL
    APPLIED PHYSICS LETTERS, 1987, 51 (11) : 840 - 842
  • [35] PERFORMANCE EVALUATION OF GAAS BASED MODFETS
    KOHN, E
    LEPORE, A
    LEE, H
    LEVY, M
    PROCEEDINGS : IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS, 1989, : 91 - 100
  • [36] PULSE-DOPED ALGAAS INGAAS PSEUDOMORPHIC MODFETS
    MOLL, N
    HUESCHEN, MR
    FISCHERCOLBRIE, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) : 879 - 886
  • [37] PERFORMANCE OF ALGAAS/INGAAS PSEUDOMORPHIC MODFETS AT CRYOGENIC TEMPERATURES
    HENDERSON, T
    KETTERSON, A
    MORKOC, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C428 - C428
  • [38] PULSE-DOPED ALGAAS/INGAAS PSEUDOMORPHIC MODFETS
    MOLL, N
    FISCHERCOLBRIE, A
    HUESCHEN, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2357 - 2358
  • [39] TRANSVERSE ELECTRIC AND TRANSVERSE MAGNETIC ACTIVE INTERSUBBAND TRANSITIONS IN GAAS/ALGAAS STEP QUANTUM-WELL
    CUI, DF
    CHEN, ZG
    YUAN, ZY
    ZHOU, YI
    LU, HB
    YANG, GZ
    CHINESE PHYSICS LETTERS, 1994, 11 (12): : 762 - 765
  • [40] PROCESS FOR ENHANCEMENT/DEPLETION-MODE GAAS/INGAAS/ALGAAS PSEUDOMORPHIC MODFETS USING SELECTIVE WET GATE RECESSING
    TONG, M
    NUMMILA, K
    SEO, JW
    KETTERSON, A
    ADESIDA, I
    ELECTRONICS LETTERS, 1992, 28 (17) : 1633 - 1634
12345