INFLUENCE OF AU OVERLAYERS ON VALENCE-BAND OFFSETS FOR BURIED CAF2/SI(111) INTERFACES

被引：12
|
作者：
XU, F
VOS, M
WEAVER, JH
机构：
来源：
PHYSICAL REVIEW B | 1989年 / 39卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.39.8008
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：8008 / 8011
页数：4
相关论文
共 50 条
  • [31] Epitaxial growth and ultraviolet photoluminescence of CaF2/ZnO/CaF2 heterostructures on Si(111)
    Watanabe, M
    Maeda, Y
    Okano, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (6A): : L500 - L502
  • [32] HETEROEPITAXY OF INSULATOR METAL SILICON STRUCTURES - CAF2/NISI2/SI(111) AND CAF2/COSI2/SI(111)
    FATHAUER, RW
    HUNT, BD
    SCHOWALTER, LJ
    OKAMOTO, M
    HASHIMOTO, S
    APPLIED PHYSICS LETTERS, 1986, 49 (02) : 64 - 66
  • [33] Structure of CaF2/Si(111) long interface
    Itoh, Y
    Takahashi, I
    Ichimiya, A
    Harada, J
    Sokolov, NS
    JOURNAL OF CRYSTAL GROWTH, 1996, 166 (1-4) : 61 - 66
  • [34] Atomic structure of CaF2/Si(111) interface and defect formation on CaF2(111) surface by electron irradiation
    Miura, Kouji, 1600, (30):
  • [35] STRUCTURAL TRANSITIONS OF THE CAF2/SI(111) INTERFACE
    LUCAS, CA
    WONG, GCL
    LORETTO, D
    PHYSICAL REVIEW LETTERS, 1993, 70 (12) : 1826 - 1829
  • [36] STRAIN IN EPITAXIAL GAAS ON CAF2/SI(111)
    SCHOWALTER, LJ
    AYERS, JE
    GHANDHI, SK
    HASHIMOTO, S
    GIBSON, WM
    LEGOUES, FK
    CLAXTON, PA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 246 - 249
  • [37] STRUCTURE AND BONDING AT THE CAF2/SI (111) INTERFACE
    HIMPSEL, FJ
    HILLEBRECHT, FU
    HUGHES, G
    JORDAN, JL
    KARLSSON, UO
    MCFEELY, FR
    MORAR, JF
    RIEGER, D
    APPLIED PHYSICS LETTERS, 1986, 48 (09) : 596 - 598
  • [38] NUCLEATION OF GAAS ON CAF2/SI(111) SUBSTRATES
    LI, WD
    ANAN, T
    SCHOWALTER, LJ
    APPLIED PHYSICS LETTERS, 1994, 65 (05) : 595 - 597
  • [39] KINETIC INSTABILITY IN THE GROWTH OF CAF2 ON SI(111)
    TROMP, RM
    REUTER, MC
    PHYSICAL REVIEW LETTERS, 1994, 73 (01) : 110 - 113
  • [40] Tunneling of electrons with conservation of the transverse wave vector in the Au/CaF2/Si(111) system
    M. I. Vexler
    Yu. Yu. Illarionov
    S. M. Suturin
    V. V. Fedorov
    N. S. Sokolov
    Physics of the Solid State, 2010, 52 : 2357 - 2363
12345