CHEMICAL-VAPOR-DEPOSITION OF AMORPHOUS-SILICON USING TETRASILANE

被引：22

作者：

KANOH, H ^{[1
]}

SUGIURA, O ^{[1
]}

MATSUMURA, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS EDUC,MEGURO KU,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 6A期

关键词：

TETRASILANE; TRISILANE; DISILANE; CHEMICAL VAPOR DEPOSITION; AMORPHOUS SILICON; THIN FILM TRANSISTOR;

D O I：

10.1143/JJAP.32.2613

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous-silicon films have been deposited by the plasma-free chemical-vapor-deposition method using tetrasilane (Si4H10) at temperatures as low as 350-degrees-C. The film deposited at 350-degrees-C and 9 Torr had hydrogen content as high as 15 at. %, optical bandgap of 1.78 eV, logarithmic ratio of photoconductivity (at a light intensity of 100 mW/cm2 under AM1 conditions) to dark conductivity of 3.2, activation energy of 0.78 eV and the Urbach tail slope as small as 56 meV. Thin-film transistors have been fabricated using the film deposited at 350-degrees-C. The electron mobility was 0.6 cm2/V s under as-deposited conditions.

引用

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页码：2613 / 2619

页数：7

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