PHOTOLUMINESCENCE FROM NANOCRYSTALLITES EMBEDDED IN HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

被引：54
|
作者：
LIU, XN [1 ]
WU, XW [1 ]
BAO, XM [1 ]
HE, YL [1 ]
机构：
[1] NANJING UNIV,SOLID STATE MICROSTRUCT LAB,NANJING 210008,PEOPLES R CHINA
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 02期
关键词：
D O I：
10.1063/1.111510
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report in this letter the observation of visible photoluminescence (PL) at room temperature from nanocrystallites embedded in hydrogenated amorphous silicon films, which are prepared in a plasma enhanced chemical vapor deposition system by using strong hydrogen-diluted silane as the reactant gas source, without any post-processing. The PL is attributed to the radiative recombination process of carriers in the nanocrystallites, and the quantum size effect is responsible for the emission above the band gap of bulk crystal Si. The critical deposition parameters of this type of film are identified.
引用
收藏
页码：220 / 222
页数：3
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