PRESSURE-DEPENDENCE OF PHOTOLUMINESCENCE IN AMORPHOUS-SILICON NANOPOWDER PRODUCED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

被引：3
|
作者：
COSTA, J
ROURA, P
SULIMOV, NA
SARDIN, G
CAMPMANY, J
MORANTE, JR
BERTRAN, E
机构：
[1] Departament de Fisica Aplicada i Electronica, Universitat de Barcelona
来源：
MATERIALS SCIENCE AND TECHNOLOGY | 1995年 / 11卷 / 07期
关键词：
D O I：
10.1080/17432847.1995.11948728
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The photoluminescence emission in silicon powder grown by plasma enhanced chemical vapour deposition has a very unusual dependence on pressure. Its intensity diminishes exponentially, I(PL)proportional to I-0 exp(-p/p(0)), where p(o) has a value of several pascals. Consequently it is detectable only under vacuum. This dependence is analysed within the framework of a multistep multiphoton excitation process. It is shown that all exponential dependence on pressure of the dynamic constants (lifetimes and optical cross-sections involved in the model) can account qualitatively for all the experimental results.
引用
收藏
页码：707 / 710
页数：4
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